• DocumentCode
    3352882
  • Title

    Possibilities and limitation of SiO2 etching with parallel plate RF plasma

  • Author

    Sekiyama, Sumio ; Motoyama, Yoshikazu ; Iwasaki, Kenya

  • Author_Institution
    LSI Process Eng. Dept., Miyazak Oki Electr. Ind. Co. Ltd., Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    The RIE-Lag in a parallel plate RF plasma is examined and the possibilities and limitations of parallel plate RF plasma etching of SiO 2 are evaluated. It is found that RIE-Lag is due to nonuniform CFx radical distribution and Ar ion sputtering angle. Therefore, the countermeasures for RIE-Lag are: optimize the gas flow distribution, use a wafer chucking system without a clamp, maintain the chamber condition with an upper and lower electrode temperature, and employ a larger process chamber for more uniform radical density
  • Keywords
    ULSI; silicon compounds; sputter etching; Ar ion sputtering angle; RIE-Lag; SiO2; SiO2 etching; ULSI; contact hole etching; electrode temperature; gas flow distribution; nonuniform CFx radical distribution; parallel plate RF plasma; process chamber; wafer chucking system; Argon; Clamps; Electrodes; Fluid flow; Plasma applications; Plasma temperature; Radio frequency; Sputter etching; Sputtering; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524385
  • Filename
    524385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3352882