Title :
Possibilities and limitation of SiO2 etching with parallel plate RF plasma
Author :
Sekiyama, Sumio ; Motoyama, Yoshikazu ; Iwasaki, Kenya
Author_Institution :
LSI Process Eng. Dept., Miyazak Oki Electr. Ind. Co. Ltd., Japan
Abstract :
The RIE-Lag in a parallel plate RF plasma is examined and the possibilities and limitations of parallel plate RF plasma etching of SiO 2 are evaluated. It is found that RIE-Lag is due to nonuniform CFx radical distribution and Ar ion sputtering angle. Therefore, the countermeasures for RIE-Lag are: optimize the gas flow distribution, use a wafer chucking system without a clamp, maintain the chamber condition with an upper and lower electrode temperature, and employ a larger process chamber for more uniform radical density
Keywords :
ULSI; silicon compounds; sputter etching; Ar ion sputtering angle; RIE-Lag; SiO2; SiO2 etching; ULSI; contact hole etching; electrode temperature; gas flow distribution; nonuniform CFx radical distribution; parallel plate RF plasma; process chamber; wafer chucking system; Argon; Clamps; Electrodes; Fluid flow; Plasma applications; Plasma temperature; Radio frequency; Sputter etching; Sputtering; Temperature distribution;
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
DOI :
10.1109/ISSM.1995.524385
