Title :
Control of the Deposition Ratio of Bi2Te3 and Sb2 Te3 in a Vacuum Evaporator for fabrication of Peltier Elements
Author :
Gonçalves, L.M. ; Rocha, J.G. ; Correia, J.H. ; Couto, C.
Author_Institution :
Dept. of Industrial Electron., Minho Univ.
Abstract :
This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb 2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2degC between their hot and cold junctions, when measured at free air conditions
Keywords :
bismuth compounds; p-n junctions; semiconductor device manufacture; semiconductor growth; semiconductor materials; semiconductor thin films; three-term control; tin compounds; vapour deposited coatings; vapour deposition; Bi2Te3; PID controller; Sb2Te3; deposition ratio control; thin-film Peltier element fabrication; vacuum evaporator; Bismuth; Fabrication; Optical filters; Optical materials; Sputtering; Tellurium; Temperature control; Temperature sensors; Thermoelectric devices; Transistors;
Conference_Titel :
Industrial Electronics, 2006 IEEE International Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
1-4244-0496-7
Electronic_ISBN :
1-4244-0497-5
DOI :
10.1109/ISIE.2006.296053
