DocumentCode :
3353371
Title :
A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device
Author :
Ker, Ming-Dou ; Chen, Jung-Sheng ; Chu, Ching-Yun
Author_Institution :
Inst. of Electron., National Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
1
fYear :
2004
fDate :
23-26 May 2004
Abstract :
A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 KHz.
Keywords :
CMOS integrated circuits; energy gap; low-power electronics; reference circuits; 0.25 microns; 0.85 V; 1 V; 10 KHz; 238.2 mV; 28E-6 A; CMOS; bandgap reference circuit; low-threshold-voltage device; startup circuit; BiCMOS integrated circuits; CMOS process; CMOS technology; Laboratories; Low voltage; Nanoelectronics; Photonic band gap; Power measurement; Temperature sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1328126
Filename :
1328126
Link To Document :
بازگشت