Title :
A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device
Author :
Ker, Ming-Dou ; Chen, Jung-Sheng ; Chu, Ching-Yun
Author_Institution :
Inst. of Electron., National Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 KHz.
Keywords :
CMOS integrated circuits; energy gap; low-power electronics; reference circuits; 0.25 microns; 0.85 V; 1 V; 10 KHz; 238.2 mV; 28E-6 A; CMOS; bandgap reference circuit; low-threshold-voltage device; startup circuit; BiCMOS integrated circuits; CMOS process; CMOS technology; Laboratories; Low voltage; Nanoelectronics; Photonic band gap; Power measurement; Temperature sensors; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328126