A low-power low-voltage MOSFET-only voltage reference

Author

Bedeschi, F. ; Bonizzoni, E. ; Fantini, A. ; Resta, C. ; Torelli, G.

Author_Institution

Memory Products Group R&D, STMicroelectronics, Agrate Brianza, Italy

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A low-power low-voltage MOSFET-only voltage reference featuring very good temperature stability and referred to the positive power supply is proposed. It compensates for the temperature dependence of a gate-to-source voltage of an MOS transistor working in the weak inversion region with a proportional-to-absolute-temperature voltage generated by a pair of MOS devices operating in the same region. The circuit, designed for a 0.35-μm (0.18-μm in the memory array) CMOS flash memory technology, can operate with supply voltage as low as 1 V and draws a current of 3 μA. The simulated variation of the reference voltage is within 0.2% over the range from -20 to 80°C.

Keywords

CMOS memory circuits; MOSFET; flash memories; inversion layers; low-power electronics; power supply circuits; reference circuits; -20 to 80 C; 0.18 microns; 0.38 microns; 1 V; 3E-6 A; CMOS flash memory; MOS devices; MOS transistor; MOSFET-only voltage reference; gate-to-source voltage; low-power voltage reference; low-voltage voltage reference; positive power supply; proportional-to-absolute-temperature voltage; reference voltage; temperature dependence; temperature stability; weak inversion region; CMOS memory circuits; CMOS technology; Circuit simulation; Circuit stability; Flash memory; Low voltage; MOS devices; MOSFETs; Power supplies; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328130

Filename

1328130