Title :
A novel lateral field emitter triode with insitu vacuum encapsulation
Author :
Cheol-Min Park ; Moo-Sup Lim ; Byung-Hyuk Min ; Min-Koo Han ; Yearn-Ik Choi
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
We have designed and fabricated a novel lateral field emitter triode, which is in-situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current density of 2 /spl mu/A/tip at V/sub AC/=30 V, and high transconductance of 1.7 /spl mu/S at V/sub AC/=22 V. An in-situ vacuum encapsulation employing recessed cavities by isotropic RIE (Reactive Ion Etch) method and an electron beam evaporated molybdenum vacuum seals is implemented to fabricate a new field emitter triode.
Keywords :
electron tube manufacture; encapsulation; triodes; vacuum microelectronics; 1.7 muS; 7 to 30 V; current density; electron beam evaporated molybdenum vacuum seal; fabrication; in-situ vacuum encapsulation; isotropic reactive ion etching; lateral field emitter triode; recessed cavity; transconductance; turn-on voltage; Anodes; Cathodes; Current density; Electrodes; Encapsulation; Etching; Low voltage; Oxidation; Seals; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553590
