DocumentCode
3353721
Title
A MOSFET-structured Si tip for stable emission current
Author
Hirano, T. ; Kanemaru, S. ; Itoh, J.
Author_Institution
Electrotech. Lab., Tsukuba, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
309
Lastpage
312
Abstract
A current-controllable Si field emitter tip with a metal-oxide-semiconductor field-effect transistor (MOSFET) structure is proposed and demonstrated. The device has a simple structure in which a conical Si tip is made in the drain region of a MOSFET. The gate performs two roles; one is that of a conventional extraction gate and the other is that of a control gate for the drain current supplied to the tip. Experimental results showed that the emission current was well controlled and stabilized by the drain current Stable emission of about 0.8 /spl mu/A was obtained with a single tip. An extension to multi-gate MOSFET structure is also mentioned.
Keywords
MOSFET; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; 0.8 muA; MOSFET structure; Si; conical Si field emitter tip; control gate; drain current; emission current; extraction gate; Etching; FETs; Fabrication; Insulation; Ion implantation; Laboratories; MOSFET circuits; Niobium; Sensor arrays; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553591
Filename
553591
Link To Document