DocumentCode :
3354577
Title :
Properties of high gain GaAs switches for pulsed power applications
Author :
Zutavern, F.J. ; Loubriel, G.M. ; Hjalmarson, H.P. ; Mar, A. ; Helgeson, W.D. ; O´Malley, M.W. ; Ruebush, M.H. ; Falk, R.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
2
fYear :
1997
fDate :
June 29 1997-July 2 1997
Firstpage :
959
Abstract :
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which we are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long pulses at 50 Hz. The accelerator will produce a 700 kV, 7kA electron beam for industrial and military applications. In the low power regime, these switches are being used to switch 400 A and 5 kV to drive laser diode arrays which produce 100 ps optical pulses. These short optical pulses are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed imaging. Both types of these applications demand a better understanding of the switch properties to increase switch lifetime, reduce jitter, optimize optical triggering, and improve overall switch performance. These applications and experiments on the fundamental behavior of high gain GaAs switches is discussed. Open shutter, infra-red images and time-resolved Schlieren images of the current filaments, which form during high gain switching, are presented. Results from optical triggering experiments to produce multiple, diffuse filaments for high current repetitive switching are described.
Keywords :
III-V semiconductors; collective accelerators; gallium arsenide; infrared imaging; photoconducting switches; power semiconductor switches; pulsed power switches; schlieren systems; 100 ps; 250 kV; 30 ns; 3D laser radar; 400 A; 5 kV; 50 Hz; 7 kA; 700 kV; 75 kA; GaAs; commercial applications; current filaments; electrical range sensing; electron beam; high current repetitive switching; high gain GaAs switches; high speed imaging; industrial applications; jitter reduction; laser diode arrays; military applications; multiple diffuse filaments; open shutter infra-red images; optical pulses; optical range sensing; optical short pulse applications; optical triggering; optical triggering optimisation; overall switch performance improvement; photoconductive semiconductor switches; pulsed power applications; short optical pulses; short pulse linear induction accelerator; switch lifetime; switch properties; time-resolved Schlieren images; Electron accelerators; Gallium arsenide; High speed optical techniques; Laser radar; Optical arrays; Optical pulses; Optical sensors; Optical switches; Power semiconductor switches; Semiconductor laser arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location :
Baltimore, MA, USA
Print_ISBN :
0-7803-4213-5
Type :
conf
DOI :
10.1109/PPC.1997.674517
Filename :
674517
Link To Document :
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