• DocumentCode
    3354662
  • Title

    Alignment mark shift due to thermal non-uniformity: what is moving?

  • Author

    Lojek, B. ; Whiteman, M. ; Starzinski, K.

  • Author_Institution
    ATMEL Corp., Colorado Springs, CO
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    150
  • Lastpage
    155
  • Abstract
    The ITRS working group has identified mask alignment and overlay control as a technology roadblock with no known solutions beyond the 65 nm node. Mechanical stress induced by thermal processing critically influences the distortion and warpage of wafers. This paper investigates the wafer distortion between source/drain and contact masking steps. In the experimental part of this work we demonstrated that certain temperature non-uniformity patterns with uniformity less than 1% generate bigger warpage of processed wafer than a less uniform pattern with a higher non-uniformity
  • Keywords
    rapid thermal annealing; semiconductor technology; thermal stresses; ITRS working group; alignment mark shift; contact masking step; mask alignment; mechanical stress; overlay control; source/drain step; thermal nonuniformity; thermal processing; wafer distortion; Internal stresses; Optical distortion; Optical films; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Substrates; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
  • Conference_Location
    Portland, OR
  • Print_ISBN
    0-7803-8477-6
  • Type

    conf

  • DOI
    10.1109/RTP.2004.1441955
  • Filename
    1441955