DocumentCode
3354662
Title
Alignment mark shift due to thermal non-uniformity: what is moving?
Author
Lojek, B. ; Whiteman, M. ; Starzinski, K.
Author_Institution
ATMEL Corp., Colorado Springs, CO
fYear
2004
fDate
2004
Firstpage
150
Lastpage
155
Abstract
The ITRS working group has identified mask alignment and overlay control as a technology roadblock with no known solutions beyond the 65 nm node. Mechanical stress induced by thermal processing critically influences the distortion and warpage of wafers. This paper investigates the wafer distortion between source/drain and contact masking steps. In the experimental part of this work we demonstrated that certain temperature non-uniformity patterns with uniformity less than 1% generate bigger warpage of processed wafer than a less uniform pattern with a higher non-uniformity
Keywords
rapid thermal annealing; semiconductor technology; thermal stresses; ITRS working group; alignment mark shift; contact masking step; mask alignment; mechanical stress; overlay control; source/drain step; thermal nonuniformity; thermal processing; wafer distortion; Internal stresses; Optical distortion; Optical films; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Substrates; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location
Portland, OR
Print_ISBN
0-7803-8477-6
Type
conf
DOI
10.1109/RTP.2004.1441955
Filename
1441955
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