Title :
High reliability of nanometer-range N/sub 2/O-nitrided oxides due to suppressing hole injection
Author :
Kobayashi, K. ; Teramoto, A. ; Nakamura, T. ; Watanabe, H. ; Kurokawa, H. ; Matsui, Y. ; Hirayama, M.
Author_Institution :
LSI Res. & Dev. Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
Hole transport and trapping in N/sub 2/O-nitrided oxides have been studied. It is shown that N/sub 2/O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; hole traps; internal stresses; nanotechnology; nitridation; semiconductor device reliability; F-N stresses; MOS capacitors; MOSFETs; N/sub 2/O; channel hot-hole stresses; gate dielectrics; hole injection suppression; hole trapping; nitrided oxides; reliability; Acceleration; Current density; Energy barrier; Hot carriers; Laboratories; MOSFETs; Nitrogen; Stress; Substrate hot electron injection; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553597
