DocumentCode
3354885
Title
Investigation of volumetric radiation effects in lightpipe thermometry
Author
Frankman, David J. ; Webb, Brent W. ; Jones, Matthew R.
Author_Institution
Dept. of Mech. Eng., Brigham Young Univ., Provo, UT
fYear
2004
fDate
2004
Firstpage
195
Lastpage
202
Abstract
A major obstacle to the widespread implementation of rapid thermal processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers (LPRT) are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe influences the wafer temperature profile. This paper presents the results of a theoretical study exploring that influence. Radiation transfer in the LPRT is modeled with varying levels of rigor, ranging from a volumetrically non-participating treatment to a full (gray) solution of the radiative transfer equation. The results of the study clearly indicate the need to model the lightpipe as a volumetrically participating, semitransparent medium and further, underline the need for knowledge of accurate radiative properties of the lightpipe material
Keywords
radiation effects; rapid thermal processing; temperature measurement; thermometers; RTP; lightpipe radiation thermometers; lightpipe thermometry; radiation transfer; rapid thermal processing; volumetric radiation effects; Distortion measurement; Inductors; Measurement techniques; Mechanical engineering; Radiation effects; Rapid thermal processing; Semiconductor device modeling; Surface treatment; Temperature measurement; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location
Portland, OR
Print_ISBN
0-7803-8477-6
Type
conf
DOI
10.1109/RTP.2004.1441965
Filename
1441965
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