Title :
Development of a semiconductor switch for high power copper vapor lasers
Author :
Okamura, K. ; Shimamura, H. ; Kobayashi, N. ; Watanabe, K.
Author_Institution :
Toshiba Corp., Tokyo, Japan
fDate :
June 29 1997-July 2 1997
Abstract :
A semiconductor switch utilizing 2.5 kV, 1 kA flat packaged IGBTs, twenty pieces connected in series and two in parallel, was developed for high power copper vapor laser (CVL) excitation. Its voltage and current ratings are 31 kV and 2600 A, respectively. Since the flat packaged IGBT has no internal wiring, it is considered inherently suitable for the applications under high di/dt condition. Moreover, a low inductance coaxial construction was adopted, and an ultra short pulse of 300 ns was achieved. Furthermore, from the experimental results with an actual CVL amplifier, it is confirmed that the semiconductor switch has sufficient performance as the main switch of the pulsed power supply of the high power CVL.
Keywords :
gas lasers; insulated gate bipolar transistors; laser accessories; power semiconductor switches; pulsed power switches; 1 kA; 2.5 kV; 2600 A; 300 ns; 31 kV; copper vapor laser excitation; current rating; flat packaged IGBT; high power copper vapor lasers; laser amplifier; low inductance coaxial construction; pulsed power supply; semiconductor switch; ultra short pulse; voltage rating; Copper; Insulated gate bipolar transistors; Laser excitation; Power lasers; Power semiconductor switches; Pulse amplifiers; Pulsed power supplies; Semiconductor device packaging; Semiconductor lasers; Voltage;
Conference_Titel :
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location :
Baltimore, MA, USA
Print_ISBN :
0-7803-4213-5
DOI :
10.1109/PPC.1997.674520
