Title :
Progress on long wavelength VCSEL
Author :
Nakagawa, S. ; Hall, E. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Mater., California Univ., Santa Barbara, CA, USA
fDate :
July 30 2001-Aug. 1 2001
Abstract :
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) have inherent difficulties in finding appropriate material combinations for implementing both active regions and distributed Bragg reflectors (DBRs) on the same substrates, which are not common problems for 850-980 nm devices. One way to solve these issues is to employ GaAs-AlAs stacks.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser transitions; semiconductor lasers; surface emitting lasers; 850 to 980 nm; GaAs-AlAs; GaAs-AlAs stacks; active regions; distributed Bragg reflectors; long wavelength VCSEL; substrates; Conducting materials; Gallium arsenide; Indium phosphide; Mirrors; Optical materials; Power generation; Quantum well lasers; Surface emitting lasers; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica
Conference_Location :
Copper Mountain, CO, USA
Print_ISBN :
0-7803-7100-3
DOI :
10.1109/LEOSST.2001.941890
