DocumentCode :
3355064
Title :
Correlation between incubation time for edge drift and Pb migration in electromigration of eutectic SnPb lines
Author :
Yoon, Min-Seung ; Lee, Shin-Bok ; Ko, Min-Ky ; Park, Young-Bae ; Young-Chang Joo
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
fYear :
2005
fDate :
31 May-3 June 2005
Firstpage :
1427
Abstract :
The smaller flip chip electronic packages are likely to have the higher current densities through their bumps, and this caused a failure due to electromigration at the eutectic SnPb solder bumps. In this study, we have analyzed the edge displacement with time and the relative Pb contents along the line as a result of the electromigration of eutectic SnPb using "edge drift" structures. It was of interest that an incubation stage for the edge drift was observed in the eutectic SnPb electromigration, i.e. there was a time duration before an edge began to move. The time duration for the incubation stage, and the drift velocity decreased in the smaller line length. It was observed that Pb became depleted at the cathode end while a pile-up of Pb was formed near the cathode end after the end of the incubation stage.
Keywords :
current density; electromigration; electronics packaging; eutectic alloys; flip-chip devices; integrated circuit reliability; lead alloys; tin alloys; Pb depletion; Pb migration; Pb pile-up; SnPb; current density; edge displacement; edge drift; electromigration; eutectic SnPb line; flip chip electronic package; incubation time; Cathodes; Current density; Electromigration; Electron mobility; Flip chip; Integrated circuit interconnections; Integrated circuit reliability; Materials science and technology; Packaging; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2005. Proceedings. 55th
ISSN :
0569-5503
Print_ISBN :
0-7803-8907-7
Type :
conf
DOI :
10.1109/ECTC.2005.1441973
Filename :
1441973
Link To Document :
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