Slurry engineering for self-stopping, dishing free SiO/sub 2/-CMP

Author

Nojo, H. ; Kodera, M. ; Nakata, R.

Author_Institution

Semicond. Manuf. Eng. Center, Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

349

Lastpage

352

Abstract

A new type of slurry, in which much surfactant was added into a conventional CeO/sub 2/ slurry, was developed for SiO/sub 2/ chemical mechanical polishing (CMP). The new slurry has unique characteristics. Because the polishing rate drops as planarization progresses, polishing can stop automatically. Therefore, it is easy to control the remaining thickness. Moreover, it is possible to planarize a surface without any dishing, even at a wide depressed portion (4 mm). Therefore, the global planarization within a chip can be obtained without any stopping layer or design limitations.

Keywords

dielectric thin films; integrated circuit technology; polishing; silicon compounds; thickness control; 0.25 mum; CMP; CeO/sub 2/; CeO/sub 2/ slurry engineering; SiO/sub 2/; SiO/sub 2/ chemical mechanical polishing; dishing free; polishing rate; self-stopping; surface planarization; surfactant addition; thickness control; wide depressed portion; Artificial intelligence; Automatic control; Laboratories; Microelectronics; Planarization; Polymers; Semiconductor device manufacture; Slurries; Thickness control; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553600

Filename

553600