DocumentCode :
3355299
Title :
Development of low noise radiation hard sensors and cables for the CBM Silicon Tracking System
Author :
Chatterji, S. ; Singla, M. ; Lymanets, A. ; Mueller, W.F.J. ; Merkin, M. ; Heuser, J.M.
Author_Institution :
GSI Helmholtz Centre for Heavy Ion Res. GmbH, Darmstadt, Germany
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
1065
Lastpage :
1070
Abstract :
The performance of Double Sided silicon Strip Detectors (DSSDs) and Kapton cables for the Silicon Tracking System (STS) of the upcoming Compressed Baryonic Matter (CBM) experiment at FAIR is being reported. The CBM STS will consist of 8 stations of DSSDs at a distance between 25-100 cm downstream of the target. These DSSDs have a pitch of around 58 μm, stereo angle of ± 7.50 with double metallization on either side. Total integrated fluence is expected to reach 1×1015 neq cm-2 for some of the STS stations. We present the first 3-D TCAD simulated results on DSSDs using tools from SYNOPSYS. To determine the radiation hardness of these sensors, we have irradiated some of the prototypes at KRI Cyclotron facility. Our radiation damage model implemented in TCAD simulations is able to reproduce the irradiated data. Besides the static characteristics, we have also extracted interstrip parameters relevant to understand strip isolation and cross-talk issues. Transient simulations have been performed to estimate the charge collection of irradiated sensors and the collected charge has been found to exactly mimic the variation of interstrip resistance with bias voltage. Also parameters relevant for noise calculations like metal trace resistance have been measured. For ENC calculations, it is also important to determine the contribution of analog kapton cables since the length of cables could reach up to 50 cm for inner modules. We present the first finite element simulations to extract the capacitive and series resistive noise contribution from kapton cables using RAPHAEL. In order to validate RAPHAEL, we have reproduced the D0 kapton simulations which were done using ANSYS. Present prototype kapton cables have been produced at Kharkov using Aluminum traces. This paper presents a detailed comparison between Aluminum and Copper traces in terms of noise and material budget. Copper seems to be better candidate for- metal traces in cables.
Keywords :
finite element analysis; noise; nuclear electronics; position sensitive particle detectors; radiation hardening (electronics); sensors; silicon radiation detectors; 3-D TCAD simulation; CBM experiment; CBM silicon tracking system; D0 kapton simulation; DSSD; ENC calculations; FAIR; KRI Cyclotron facility; RAPHAEL; STS; SYNOPSYS; aluminum trace; analog kapton cables; bias voltage; charge collection; compressed baryonic matter experiment; copper trace; distance 25 cm to 100 cm; double sided silicon strip detectors; extracted interstrip parameters; finite element simulation; interstrip resistance; irradiated sensors; low noise radiation hard sensors; radiation damage model; series resistive noise contribution; transient simulation; wavelength 58 mum; Aluminum; Capacitance; Copper; Decision support systems; Graphics; Materials; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154574
Filename :
6154574
Link To Document :
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