DocumentCode :
335530
Title :
Evidence for the Antisite Defect BAs in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal
Author :
Wang, Z.G. ; Wang, C.H. ; Liu, Y.L. ; Luo, Y. ; Wan, S.K. ; Li, G.H. ; Lin, L.Y.
Author_Institution :
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
51
Lastpage :
54
Keywords :
Annealing; Boron; Gallium arsenide; Impurities; Laboratories; Photoluminescence; Pollution measurement; Semiconductor materials; Temperature measurement; Vibration measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752676
Filename :
752676
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=335530
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