DocumentCode :
3355371
Title :
Application of MRF scheme for low-loss transmission lines on CMOS-grade silicon
Author :
Lee, Sang-No ; Park, Sung-Jun ; Lee, Joon-Ik ; Yook, Jong-Gwan ; Kim, Yong-Jun ; Lee, Sang-Jo
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear :
2005
fDate :
31 May-3 June 2005
Firstpage :
1514
Abstract :
This paper presents a surface finishing method based on magnetorheological (MR) fluid to obtain low-loss coplanar waveguides on CMOS-grade silicon. CPWs with different lateral dimension but having identical 50 Ω characteristic impedance are evaluated. In addition, finite ground effects on CPW performances before and after magnetorheological finishing (MRF) treatment are investigated. In all cases, CPWs treated with the MR fluid-based finishing method reveal much lower attenuation constants compared to original ones owing to reduced conductor roughness. The proposed MRF scheme can be applied to smoothen three dimensional high frequency structures and dramatically improve conductor roughness.
Keywords :
CMOS integrated circuits; conductors (electric); coplanar waveguides; elemental semiconductors; magnetorheology; silicon; surface finishing; surface roughness; transmission lines; 3D high frequency structures; 50 ohm; CMOS-grade silicon; MR fluid; MRF scheme; MRF treatment; conductor roughness; coplanar waveguides; magnetorheological finishing; magnetorheological fluid; surface finishing method; transmission line; Attenuation; Conductors; Coplanar transmission lines; Coplanar waveguides; Silicon; Surface finishing; Surface impedance; Surface treatment; Surface waves; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2005. Proceedings. 55th
ISSN :
0569-5503
Print_ISBN :
0-7803-8907-7
Type :
conf
DOI :
10.1109/ECTC.2005.1441988
Filename :
1441988
Link To Document :
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