DocumentCode :
3355414
Title :
Femtosecond Transient Reflectivity Measurements As A Probe For Process Induced Defects In Silicon
Author :
Esser, A. ; Kütt, W. ; Strahnen, M. ; Maidorn, G. ; Kurz, H.
Author_Institution :
Institute of Semiconductor Electronics
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
582
Lastpage :
583
Keywords :
Charge carrier lifetime; Computerized monitoring; Delay effects; Probes; Reflectivity; Signal analysis; Signal detection; Signal resolution; Silicon; Ultrafast electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690686
Filename :
690686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3355414
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