Title :
Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections
Author :
Dixit, G.A. ; Hsu, W.Y. ; Konecni, A.J. ; Krishnan, S. ; Luttmer, J.D. ; Havemann, R.H. ; Forster, J. ; Yao, G.D. ; Narasimhan, M. ; Xu, Z. ; Ramaswami, S. ; Dhen, F.S. ; Nulman, J.
Author_Institution :
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners show significantly improved parametrics. Due to the high bottom coverage of the IMP titanium deposition process a substantial reduction in the liner thickness is possible. Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners.
Keywords :
CMOS integrated circuits; MOS capacitors; contact resistance; integrated circuit interconnections; leakage currents; plasma deposition; titanium; 0.18 mum; 0.25 mum; MOS capacitor structures; PVD chamber; Ti; bottom coverage; contact resistance distribution; contact structures; directionality; double level metal salicided CMOS flow; improved parametrics; inductively coupled plasma source; ion metal plasma deposited Ti liners; leakage currents; liner thickness reduction; multilevel interconnections; plasma damage; via structures; Atherosclerosis; Chemical vapor deposition; Collimators; Etching; Plasma applications; Plasma density; Plasma materials processing; Plasma temperature; Plugs; Titanium;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553602
