Title :
Compact tunable CMOS OTA with high linearity
Author :
Kachare, Meghraj ; Ramirez-Angulo, Jaime ; López-Martín, Antonio J. ; Carvajal, Ramon G.
Author_Institution :
Klipsch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA
Abstract :
The use of simple and extremely accurate voltage buffers to drive two MOS transistors in triode region is employed to obtain a very linear voltage-to-current conversion. Transconductance can be simply and precisely adjusted using DC level shifters. Measurement results of a balanced transconductor fabricated in a 0.5-μm CMOS technology show a -54 dB THD at 100 kHz for 80-μA peak-to-peak outputs, using a 2-V supply. Silicon area is 0.07 mm2 and static power consumption is 0.92 mW.
Keywords :
CMOS analogue integrated circuits; buffer circuits; convertors; integrated circuit measurement; integrated circuit testing; operational amplifiers; silicon; transistors; 0.5 micron; 0.92 mW; 100 kHz; 2 V; 80 muA; CMOS technology; DC level shifters; MOS transistors; Si; THD; compact tunable CMOS OTA; high linearity; linear voltage-to-current conversion; peak-to-peak output; silicon area; static power consumption; transconductance; transconductor fabrication; triode region; voltage buffers; CMOS technology; Circuits; Drives; Linearity; MOSFETs; Nonlinear distortion; Silicon; Transconductance; Transconductors; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328289
