Title :
Repetitive nanosecond all-solid-state pulsers based on SOS diodes
Author :
Lyubutin, S.K. ; Mesyats, G.A. ; Rukin, S.N. ; Slovikovskii, B.G.
Author_Institution :
Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia
fDate :
June 29 1997-July 2 1997
Abstract :
The paper describes design and technical specifications of nanosecond high-voltage pulsed generators that have an all-solid-state switching system. As a final power amplifier the semiconductor opening switch (SOS) and an inductive store are used. The devices present desktop hand-carried units that are capable of delivering to a load pulses with the following parameters: voltage 110 to 450 kV; current 0.4 to 1.5 kA; pulse width 20 to 40 ns; continuous pulse repetition rate 100 to 1000 pps; and burst mode up to 5000 pps.
Keywords :
inductive energy storage; power amplifiers; power semiconductor diodes; power semiconductor switches; power supplies to apparatus; pulse generators; pulsed power switches; 0.4 to 1.5 kA; 110 to 450 kV; 20 to 40 ns; all-solid-state pulsers; desktop hand-carried units; high-voltage pulsed generators; inductive store; power amplifier; semiconductor opening switch diodes; Frequency; Nanoscale devices; Pulse amplifiers; Pulse generation; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation; Switches; Switching systems; Voltage;
Conference_Titel :
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location :
Baltimore, MA, USA
Print_ISBN :
0-7803-4213-5
DOI :
10.1109/PPC.1997.674524
