Title :
Intracavity difference-frequency generation in GaAS/InGaAs/InGaP butt-joint diode lasers
Author :
Aleshkin, V.Ya. ; Biryukov, A.A. ; Gavrilenko, V.I. ; Dubinov, A.A. ; Kocharovsky, Vl.V. ; Maremyanin, K.V. ; Morozov, S.V. ; Nekorkin, S.M. ; Zvonkov, B.N.
Author_Institution :
Inst. for Phys. of Microstruct., Russian Acad. of Sci., Nizhny Novgorod
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
The room-temperature intracavity difference-frequency generation in mid-infrared spectral range have been observed in a butt-joint GaAs/InGaAs/InGaP quantum-well laser diode which supports lasing at two closely spaced wavelengths in the near-infrared range. A special asymmetric waveguide design and a low-doped substrate that minimize mid infrared losses and realize phase matching condition for the difference-frequency generation process were used in butt-joint lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical frequency conversion; optical phase matching; quantum well lasers; waveguide lasers; GaAs-InGaAs-InGaP; asymmetric waveguide design; butt-joint diode lasers; frequency generation; intracavity difference; low-doped substrate; mid-infrared spectral range; quantum-well laser diode; semiconductor lasers; temperature 293 K to 298 K; Diode lasers; Frequency; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical design; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Waveguide lasers; difference frequency generation; diode laser;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671849
