DocumentCode
3356076
Title
Terahertz difference frequency generation in GaAs-based butt-joint diode laser with germanium substrate
Author
Aleshkin, Vladimir Ya ; Dubinov, Alexander A.
Author_Institution
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod
fYear
2008
fDate
Sept. 29 2008-Oct. 4 2008
Firstpage
251
Lastpage
253
Abstract
The difference frequency generation arising by mixing of two near-infrared modes in a GaAs based butt-joint diode laser with germanium substrate are studied theoretically. It is shown that the power of the difference mode in the 5 - 50 THz range generated by 1-W near-infrared modes in a 100-mum-wide laser at room temperature can be 40 muW.
Keywords
III-V semiconductors; gallium arsenide; germanium; laser beams; laser modes; optical frequency conversion; semiconductor lasers; substrates; GaAs; Ge; butt-joint diode laser; frequency 5 THz to 50 THz; germanium substrate; near-infrared mode mixing; power 1 W; temperature 293 K to 298 K; terahertz difference frequency generation; Absorption; Diode lasers; Frequency; Gallium arsenide; Germanium; Laser modes; Quantum cascade lasers; Semiconductor lasers; Substrates; Waveguide lasers; difference frequency generation; diode laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location
Crimea
Print_ISBN
978-1-4244-1973-9
Electronic_ISBN
978-1-4244-1974-6
Type
conf
DOI
10.1109/CAOL.2008.4671850
Filename
4671850
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