DocumentCode :
3356122
Title :
Characterization and modeling of electroluminescence from single-quantum-well lnGaN/AIGaN/GaN greenIight-emitting diodes
Author :
Eliseev, P.G. ; Perlin, Piotr ; Furioli, J. ; Osinski, M.
Author_Institution :
Center for High Technology Materials, University of New Mexico
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
110
Lastpage :
111
Keywords :
Current measurement; Electroluminescence; Gallium nitride; Indium; Light emitting diodes; Photonic band gap; Position measurement; Stimulated emission; Tail; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.602318
Filename :
602318
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3356122
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