Title :
Low-cost EHF power amplifiers
Author :
Wroblewski, Gerald W. ; McMahon, Frank ; Kleidermacher, Michael ; Ferguson, Daniel W.
Author_Institution :
GE Govt. Commun. Syst. Dept., Camden, NJ, USA
Abstract :
The authors investigate the lowest-level building block of the EHF amplifier chain, a 1.5-W amplifier module that can be combined for higher power. Based on pseudomorphic high electron mobility transistor (HEMT) technology, this amplifier incorporates 900-μm gate-width devices that demonstrate a 0.5-W output power and up to 34% power-added efficiency. Four of these are to be combined in the output state to generate 1.5 W of power. An integrated product development approach for the device and modules is being used to focus on reproducibility and manufacturing issues earlier in the development cycle to ultimately lower the overall terminal costs. By designing a common yet flexible amplifier building block, a limited, cost-effective set of subassemblies will meet the requirements for all the various EHF programs, effectively maximizing their application across a broader market
Keywords :
high electron mobility transistors; microwave amplifiers; mobile radio systems; power amplifiers; radio equipment; solid-state microwave circuits; 1.5 W; HEMT technology; amplifier building block; integrated product development approach; low-cost EHF power amplifiers; modules; portable radio terminals; Electron mobility; HEMTs; High power amplifiers; MODFETs; Manufacturing; PHEMTs; Power amplifiers; Power generation; Product development; Reproducibility of results;
Conference_Titel :
Military Communications Conference, 1992. MILCOM '92, Conference Record. Communications - Fusing Command, Control and Intelligence., IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0585-X
DOI :
10.1109/MILCOM.1992.243964
