Title :
Characterization Of Damage Of Ion Implanted Silicon By Thermal Wave Technology And Scanning Raman Microscopy
Author :
Inoue, M. ; Ishikawa, K. ; Yoshida, M. ; Nakashima, S. ; Mizoguchi, K.
Author_Institution :
Matsushita Electronics
Keywords :
Annealing; Boron; Ion implantation; Laboratories; Lattices; Monitoring; Physics; Raman scattering; Silicon; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
DOI :
10.1109/LEOS.1990.690691
