Hot-carriers at low voltages: new experimental evidences and open issues

Author

Selmi, L. ; Fischer, Bernd ; Ghetti, A. ; Bez, R.

Author_Institution

DEIS, Bologna, Italy

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

375

Lastpage

378

Abstract

This paper reports new homogeneous hot-electron injection data at 300 K and 77 K covering applied voltages from well below to well above the Si-SiO/sub 2/ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data is proposed, and supported by Monte Carlo simulations of the injection experiment. Modeling issues and possible implications of the results for future devices and MOSFET gate currents are briefly discussed.

Keywords

MOSFET; Monte Carlo methods; cryogenic electronics; hot carriers; impact ionisation; semiconductor device models; 300 K; 77 K; MOSFET gate currents; Monte Carlo simulations; Si-SiO/sub 2/; Si-SiO/sub 2/ barrier height; accelerating voltages; homogeneous hot-electron injection data; hot-carriers; low voltages; modeling issues; nMOS floating gate transistors; oxide fields; Absorption; Acceleration; Doping profiles; Electrons; Feedback; Hot carriers; Impact ionization; Low voltage; MOSFET circuits; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553606

Filename

553606