Title :
Autobalanced photoreceiver based on erbium CdS doped thin films
Author :
Pintle, J. A Dávila ; Lara, E. Reynoso ; Rendon Marin, M.
Author_Institution :
Benemerita Univ. Autonoma de Puebla, Puebla
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
By employing chemical bath deposition, polycrystalline thin films of CdS were grown on glass substrates. During the process of growth relative volumes of nitrate of erbium penta- hydrate (Er(NO3)35H2O) were added in aqueous solution of CdS in order to obtain different levels of doping, the samples obtained by this method were electrically and optically characterized determining the dark conductivity, and photoconductivity in the 590 to 451 nm range respectively, afterwards, the most suitable sample with optimal electrical and optical characteristics was chosen to develop an autobalanced photo receiver which uses the photoconductive properties of CdS for electronically auto compensate the intensity difference between the signal and reference sensor.
Keywords :
II-VI semiconductors; cadmium compounds; chemical vapour deposition; dark conductivity; doping profiles; erbium; optical receivers; photoconducting materials; photoconductivity; semiconductor thin films; CdS:Er; SiO2; autobalanced photoreceiver; chemical bath deposition; dark conductivity; doping levels; erbium doped thin films; erbium pentahydrate; glass substrates; photoconductivity; polycrystalline thin films; wavelength 590 nm to 451 nm; Chemicals; Doping; Erbium; Glass; Optical films; Optical receivers; Optical sensors; Photoconductivity; Sputtering; Transistors; auto balanced; control; photoconductivity;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671870
