DocumentCode :
3356438
Title :
Mapping Of Deep Level Concentration In Semi-insulating GaAs Wafers With A Laser Diode (λ=1.3 μm)
Author :
Pan, Ci-Ling ; Chang, C.-S. ; Wu, Hsiao-Hua ; Hsieh, Tzung-Rue
Author_Institution :
National Chiao Tung University
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
598
Lastpage :
599
Keywords :
Absorption; Annealing; Diode lasers; Etching; Gallium arsenide; Plasma applications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690692
Filename :
690692
Link To Document :
بازگشت