DocumentCode
3356552
Title
A novel high current rate SCR for pulse power applications
Author
Ramezani, E. ; Spahn, E. ; Bruderer, G.
Author_Institution
ABB Semicond. AG, Lenzburg, Switzerland
Volume
2
fYear
1997
fDate
June 29 1997-July 2 1997
Firstpage
1016
Abstract
Novel high-power thyristors with a blocking capability of up to 6 kV and an excellent turn-on behavior are presented. These devices have been investigated as closing switches for very short current pulses as they occur, e.g., with laser applications for very short pulse durations, or with electric launchers for longer pulses at very high di/dt. The maximum current capability of the devices is of the order of a few hundred kiloamps, and the current rise rate can go up to several ten kA//spl mu/s. The triggering circuit is arranged directly around the thyristor in order to minimize the parasitic inductance in the gate-cathode loop and to optimize the compactness of the whole switch. In this way a very high gate current can instantaneously be applied, and the device turns on very fast. This is essential for a series connection of devices as well as for a minimization of the turn-on losses. The power needed for the triggering circuit can be supplied by external sources or can be extracted from the main pulse power circuit. The combination of the above high-power thyristor with the low-inductance triggering circuit forms an ideal switch that can be used in a wide range of pulse power applications. The above mentioned novel semiconductor devices will be available both as asymmetric, reverse-conducting as well as reverse blocking SCRs.
Keywords
inductance; losses; pulsed power switches; thyristor applications; trigger circuits; asymmetric reverse-conducting; closing switches; current rise rate; electric launchers; gate-cathode loop; high current rate SCR; high-power thyristors; laser applications; main pulse power circuit; maximum current capability; parasitic inductance minimisation; pulse power applications; reverse blocking SCR; semiconductor devices; series connection; triggering circuit; turn-on behavior; turn-on losses minimisation; very short current pulses; Cathodes; Inductance; Optical pulses; Pulse circuits; Semiconductor diodes; Silicon; Switches; Switching circuits; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location
Baltimore, MA, USA
Print_ISBN
0-7803-4213-5
Type
conf
DOI
10.1109/PPC.1997.674528
Filename
674528
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