Title :
Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?
Author :
Jungemann, C. ; Yamaguchi, S. ; Goto, H.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
In previous works a difference between surface (MOS devices) and bulk (bipolar devices) impact ionization (II) has been found. It is shown that this difference is the result of inadequate II models used to interpret the experimental data and not due to unknown or new physical effects in MOS devices. Utilizing a Full Band Monte Carlo program experimental results for bulk systems and MOS devices are reproduced without assuming a difference between surface and bulk II.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; semiconductor device models; silicon; II models; MOS devices; NMOSFETs; Si; bipolar devices; bulk impact ionization; full band Monte Carlo program; surface impact ionization; Electrons; FETs; Impact ionization; MOS devices; MOSFETs; Monte Carlo methods; Postal services; Rough surfaces; Silicon; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553608
