DocumentCode :
3356836
Title :
A New Characterization Method Of Stress At Heterointerfaces By Deep-level Luminescence
Author :
Nishino, T.
Author_Institution :
Kobe University
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
603
Lastpage :
606
Keywords :
Chromium; Energy states; Epitaxial layers; Gallium arsenide; Lattices; Luminescence; Semiconductor impurities; Semiconductor materials; Thermal expansion; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690694
Filename :
690694
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3356836
