DocumentCode
3356836
Title
A New Characterization Method Of Stress At Heterointerfaces By Deep-level Luminescence
Author
Nishino, T.
Author_Institution
Kobe University
fYear
1990
fDate
4-9 Nov 1990
Firstpage
603
Lastpage
606
Keywords
Chromium; Energy states; Epitaxial layers; Gallium arsenide; Lattices; Luminescence; Semiconductor impurities; Semiconductor materials; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN
0-87942-550-4
Type
conf
DOI
10.1109/LEOS.1990.690694
Filename
690694
Link To Document