DocumentCode
3356870
Title
Scattering theory of the short channel MOSFET
Author
Lundstrom, M.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
387
Lastpage
390
Abstract
A simple, physical approach for modeling ultrasubmicron MOSFETs is introduced. The approach, based on scattering probabilities, produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFETs as well. The new model is related to conventional models, and issues such as the role of inversion layer mobility, velocity overshoot, and identifying the maximum saturated drain current, are addressed.
Keywords
MOSFET; carrier mobility; elemental semiconductors; inversion layers; semiconductor device models; silicon; Si; ballistic MOSFETs; inversion layer mobility; maximum saturated drain current; scattering probabilities; short channel MOSFET; ultrasubmicron MOSFETs; velocity overshoot; Acoustic scattering; Analytical models; Delay; Electrons; Equations; MOSFET circuits; Physics computing; Reservoirs; Technology management; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553609
Filename
553609
Link To Document