A low voltage dual gate integrated CMOS mixer for 2.4GHz band applications

Author

Cui, Jiqing ; Lian, Yong ; Li, Ming Fu

Author_Institution

Dept. of Electr. & Comput. Eng., National Univ. of Singapore, Singapore

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A new topology for a low voltage dual gate mixer for 2.4GHz band applications was implemented in 0.35μm CMOS technology. With resistive degeneration, and implemented with MOS transistors in the linear region, this topology proves to be suitable for down-converters requiring low-voltage and high linearity. With a RF input of 2.4GHz and an IF output of 100MHz, the mixer has a voltage conversion gain of 9.48dB with a 50Ω output load, an input-referred third-order intercept point of +3dBm, and noise figure of 17.69dB while requiring -5dBm of LO power and consuming 4.7mA from a 2V supply. Though the mixer design was implemented in 0.35μm CMOS process in this project, with the device scaling down, the design idea could be implemented in other sub-micron technologies, which could provide good performance with lower supply voltages.

Keywords

CMOS integrated circuits; MOSFET; mixers (circuits); 0.35 micron; 100 MHz; 17.69 dB; 2 V; 2.4 GHz; 4.7 mA; 50 ohm; 9.48 dB; CMOS technology; MOS transistors; down-converters; low voltage dual gate integrated CMOS mixer; resistive degeneration; submicron technologies; voltage conversion gain; Application software; CMOS process; CMOS technology; Integrated circuit noise; Integrated circuit technology; Linearity; Low voltage; Noise figure; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328357

Filename

1328357