DocumentCode
3356933
Title
Optical phonon instability caused by ultra-high-speed electron transport in nanoscale samples
Author
Kochelap, V.A. ; Klimov, A.A. ; Korotyeyev, V.V. ; Kim, K.W.
Author_Institution
Dept. of Theor. Phys., Inst. of Semicond. Phys., Kiev
fYear
2008
fDate
Sept. 29 2008-Oct. 4 2008
Firstpage
264
Lastpage
266
Abstract
We investigated ultra-high frequency electrical properties of nanoscale n+-i-n+ diodes made of polar semiconductors. We found the optical vibrations instability and the large effect of the negative dynamic resistance. These effects indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the 10 THz range.
Keywords
diodes; electromagnetic waves; electron transport theory; high-speed optical techniques; optical bistability; polar semiconductors; electrical properties; electromagnetic radiation; nanoscale n+-i-n+ diodes; nanoscale samples; optical phonon instability; polar semiconductors; ultra-high-speed electron transport; Electromagnetic radiation; Electron optics; Frequency; High speed optical techniques; Optical pumping; Permittivity; Phonons; Physics; Poisson equations; Semiconductor diodes; Ballistic diodes; THz instability; optical phonons;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location
Crimea
Print_ISBN
978-1-4244-1973-9
Electronic_ISBN
978-1-4244-1974-6
Type
conf
DOI
10.1109/CAOL.2008.4671902
Filename
4671902
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