Title :
Optical phonon instability caused by ultra-high-speed electron transport in nanoscale samples
Author :
Kochelap, V.A. ; Klimov, A.A. ; Korotyeyev, V.V. ; Kim, K.W.
Author_Institution :
Dept. of Theor. Phys., Inst. of Semicond. Phys., Kiev
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
We investigated ultra-high frequency electrical properties of nanoscale n+-i-n+ diodes made of polar semiconductors. We found the optical vibrations instability and the large effect of the negative dynamic resistance. These effects indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the 10 THz range.
Keywords :
diodes; electromagnetic waves; electron transport theory; high-speed optical techniques; optical bistability; polar semiconductors; electrical properties; electromagnetic radiation; nanoscale n+-i-n+ diodes; nanoscale samples; optical phonon instability; polar semiconductors; ultra-high-speed electron transport; Electromagnetic radiation; Electron optics; Frequency; High speed optical techniques; Optical pumping; Permittivity; Phonons; Physics; Poisson equations; Semiconductor diodes; Ballistic diodes; THz instability; optical phonons;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671902