DocumentCode :
3356968
Title :
Nonlinear gain and output power characteristics of quantum-well sources
Author :
Kononenko, Valerii K.
Author_Institution :
Stepanov Inst. of Phys. NASB, Minsk
fYear :
2008
fDate :
Sept. 29 2008-Oct. 4 2008
Firstpage :
239
Lastpage :
241
Abstract :
The gain saturation in quantum-well heterostructures under the change in the populations of the subband levels is described in detail. The nonlinearity parameters are introduced and their change with the pump, radiation frequency, temperature, polarization, and the quantum-well level distribution is examined. The main attention is given to quantum-well heterostructure sources based on III-V compounds, including GaInAsSb, GaInAs, GaInAsP, GaAs, and GaInN, which emit in the spectral interval from the mid-infrared to visible light.
Keywords :
III-V semiconductors; nonlinear optics; quantum well lasers; III-V compounds; gain saturation; laser diode; nonlinear gain; nonlinearity parameters; output power characteristics; quantum-well heterostructures; quantum-well level distribution; quantum-well sources; radiation frequency; Frequency; Nonlinear optics; Optical amplifiers; Optical polarization; Optical refraction; Optical saturation; Power generation; Quantum well lasers; Quantum wells; Temperature distribution; amplifier; gain saturation; laser diode; nonlinearity parameter; quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
Type :
conf
DOI :
10.1109/CAOL.2008.4671904
Filename :
4671904
Link To Document :
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