Title :
625 nm wavelength vertical-external-cavity optical-pumped laser based on GaInP/AlGaInP nanostructure with DBR mirror
Author :
Kozlovsky, V.I. ; Lavrushin, B.M. ; Skasyrsky, Ya.K. ; Tiberi, M.D.
Author_Institution :
P.N. Lebedev Phys. Inst., RAS, Moscow
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure with an AlAs/AlGaAs distributed Bragg reflector (DBR) and an external mirror was realised under optical pumping by emission of a frequency-doubled Q-modulated diode-pumped Nd-YAG laser. Lasing occurred at a wavelength of 625 nm in TEM00 mode with a peak output power of 3.1 W at a repetition rate of 6 kHz.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser mirrors; nanostructured materials; optical harmonic generation; optical pumping; quantum well lasers; surface emitting lasers; DBR mirror; GaInP-AlGaInP; Q-modulated laser; TEM00 mode; diode-pumped laser; distributed Bragg reflector; frequency-doubled laser; multi quantum well structure; nanostructure; power 3.1 W; time 5 ns; vertical-external-cavity optical-pumped laser; wavelength 625 nm; Distributed Bragg reflectors; Frequency; Mirrors; Optical pulses; Optical pumping; Pump lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Stimulated emission; GaInP/AlGaInP MQW structure; VECSEL; optical pumping;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671907
