Title :
Understanding the differences in the effective-field dependence of electron and hole inversion layer mobilities
Author :
Jallepalli, S. ; Shih, W.-K. ; Bude, J.D. ; Pinto, M.R. ; Maziar, C.M. ; Tasch, A.F., Jr.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
For the first time, results from a first-principles study of carrier quantization are coupled to realistic Monte Carlo (MC) simulations to investigate MOS inversion layer electron and hole mobilities. These simulations provide insights into the source of the differences between the effective-field dependencies of electron (inverse square) and hole (inverse linear) inversion layer mobilities at high effective-fields.
Keywords :
MIS devices; Monte Carlo methods; electron mobility; hole mobility; inversion layers; MOS inversion layer; Monte Carlo simulations; carrier quantization; effective-field dependence; effective-field dependencies; electron mobility; hole mobility; inverse linear mobilities; inverse square mobilities; inversion layer mobilities; Charge carrier processes; Couplings; Dispersion; Displays; Effective mass; Electron mobility; Feeds; Light scattering; Monte Carlo methods; Quantization;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553610
