Title :
Effective mobility in heavily doped n-MOSFETs: measurements and models
Author :
Villa, S. ; Lacaita, A.L. ; Perron, L. ; Bez, R.
Author_Institution :
Politecnico di Milano, Italy
Abstract :
A careful modeling of electron mobility in ULSI-MOSFETs must account for the strong two-dimensionality of the electron gas and the effect of charge trapping on the measurements. We propose a new analytical mobility model suitable for implementation in device simulation codes. The model parameters have been tailored to experimental data over a wide temperature, channel doping and bias range.
Keywords :
MOS integrated circuits; MOSFET; ULSI; electron mobility; heavily doped semiconductors; semiconductor device models; semiconductor doping; two-dimensional electron gas; ULSI-MOSFETs; analytical mobility model; bias range; channel doping; charge trapping; device simulation codes; effective mobility; electron gas two-dimensionality; electron mobility; heavily doped n-MOSFETs; model parameters; Acoustic scattering; Analytical models; Charge measurement; Current measurement; Doping; Electron mobility; Electron traps; MOSFET circuits; Phonons; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553611
