Title :
Energy and emission spectra of the Ga1−xInxAsySb1−y/AlxGa1−xAsySb1−y multiple-quantum-well heterostructures
Author :
Manak, I.S. ; Ushakov, D.V. ; Bialiausky, U.S.
Author_Institution :
Belarussian State Univ., Minsk
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
For asymmetric multiple-quantum-well heterostructures based on Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3-2.84 mum spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and emission spectra are performed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; Ga1-xInxAsySb1-y-AlxGa1-xAsySb1-y; asymmetric multiple-quantum-well heterostructures; band diagrams; emission spectra; flat waveguide gain spectrum; semiconductors; Charge carrier processes; Effective mass; Electron emission; Iron; Magnetic resonance imaging; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor waveguides; Stimulated emission; inhomogeneous excitation; multiple-quantum-wells; wide waveguide gain spectra;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671923
