• DocumentCode
    3357567
  • Title

    Ferroelectric and pyroelectric characteristics of A site Nb+5 doped PZT

  • Author

    Tripathi, Anita ; Tripathi, A.K. ; Goel, T.C. ; Pillai, P.K.C.

  • Author_Institution
    Dept. of Phys., Indian Inst. of Technol., New Delhi, India
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    878
  • Lastpage
    883
  • Abstract
    Nb+5 doped PZT ceramic has been prepared by conventional solid solution technique. The doping has been carried out at A-site by varying the dopant concentration from 2.5% to 7.5%. The X-ray diffractograms of these samples show tetragonality with c/a ratio close to unity. The dielectric measurements do not show any Curie transition upto 160°C. It was found that the dielectric constant at room temperature initially increases as Niobium concentration increases from 2.5 to 4% and then starts decreasing upto 7.5 atom percent of Niobium. Hysteresis phenomena in these samples was studied to ascertain the ferroelectric nature of the specimens. These samples were corona poled and their piezo and pyroelectric properties were measured. Pyrocoefficient (Ps), saturation polarization (Ps) and remanent polarization show maximum values of 10 nC/cm2°C, 17 μC/cm2 respectively at around 4 atom% of niobium concentration. These values of Ps and P, coupled with low dielectric permittivity and loss suggests that A-site Nb+5 doped PZT may find useful applications in pyroelectric detectors
  • Keywords
    dielectric hysteresis; ferroelectric materials; lead compounds; niobium; permittivity; piezoceramics; pyroelectricity; A-site; Nb+5 doped PZT ceramic; PZT:Nb; PbZrO3TiO3:Nb; X-ray diffraction; corona poling; dielectric permittivity; ferroelectric characteristics; hysteresis; piezoelectric properties; pyroelectric characteristics; remanent polarization; saturation polarization; solid solution; Atomic measurements; Ceramics; Dielectric losses; Doping; Ferroelectric materials; Niobium; Polarization; Pyroelectricity; Solids; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578225
  • Filename
    578225