CdTe diode detectors with a p-n junction formed by laser-induced doping

Author

Gnatyuk, V.A. ; Aoki, T. ; Vlasenko, O.I. ; Levytskyi, S.N.

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

fYear

2011

fDate

23-29 Oct. 2011

Firstpage

4506

Lastpage

4509

Abstract

The procedures of fabrication of X- and γ-ray CdTe-based diode detectors with a p-n junction formed by laser-induced doping of the surface region of high resistivity p-like crystals in different environments are considered. The use of a relatively thick In dopant film and laser irradiation of In/CdTe structure in liquid allowed to apply higher laser energy densities and multiple irradiation of an In film. Finally, the room temperature In/CdTe/Au diode detectors with extremely high energy resolution have been obtained.

Keywords

X-ray detection; gamma-ray detection; laser materials processing; p-n junctions; semiconductor counters; semiconductor diodes; semiconductor doping; CdTe diode detectors; In-CdTe-Au diode detectors; X-ray CdTe based diode detectors; detector fabrication; gamma-ray CdTe based diode detectors; high resistivity p like crystals; indium dopant film; indium doped CdTe detectors; laser induced doping; p-n junction; semiconductor surface region; Atom lasers; Atomic beams; Atomic measurements; Conferences; Crystals; Measurement by laser beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE

Conference_Location

Valencia

ISSN

1082-3654

Print_ISBN

978-1-4673-0118-3

Type

conf

DOI

10.1109/NSSMIC.2011.6154699

Filename

6154699