DocumentCode :
3357865
Title :
Effect of the quantum-well depth on the hole scattering and over-barrier resonant states
Author :
Polupanov, Alexander F. ; Kruglov, Alexis N.
Author_Institution :
Inst. of Radio-Eng. & Electron. of the Russian Acad. of Sci., Russian Acad. of Sci., Moscow
fYear :
2008
fDate :
Sept. 29 2008-Oct. 4 2008
Firstpage :
204
Lastpage :
206
Abstract :
The effect of the quantum-well depth and the elastic strain due to lattice constant of well and barrier material difference on the hole scattering and over-barrier resonant hole states is studied. In the case of shallow quantum wells there is in fact a long-living over-barrier resonant hole state. When the magnitude of the quantum-well depth decreases, resonance peak of the absolute reflection becomes extremely narrow (against the background of the unity transmission at all energies except this narrow interval), shifts towards the energy value where opens the channel with propagating light hole and then vanishes. The energy of the absolute reflection almost coincides with the value of the real part of the energy of the S-matrix pole corresponding to the resonant state.
Keywords :
S-matrix theory; lattice constants; resonant states; semiconductor quantum wells; S-matrix pole; elastic strain; hole scattering; lattice constant; light propagation; over-barrier resonant states; quantum-well depth; semiconductor quantum wells; shallow quantum wells; Capacitive sensors; Differential equations; Image analysis; Lattices; Optical propagation; Optical reflection; Particle scattering; Quantum wells; Resonance light scattering; Shape; resonant states; semiconductor quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
Type :
conf
DOI :
10.1109/CAOL.2008.4671954
Filename :
4671954
Link To Document :
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