First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy

Author

Egawa, T. ; Ogawa, A. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

413

Lastpage

416

Abstract

The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the I/sub th/ of 260 mA, the J/sub th/ of 5.4 kA/cm/sup 2/ and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K. The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; island structure; optical fabrication; semiconductor lasers; vapour phase epitaxial growth; 260 mA; 791 nm; AlGaAs-GaAs; AlGaAs/GaAs laser diode; Si; Si substrate; active region; dislocation number; droplet epitaxy; fabrication; reliability; self-formed GaAs islands; Annealing; Buffer layers; Diode lasers; Epitaxial growth; Gallium arsenide; Hydrogen; Light emitting diodes; Optical device fabrication; Photonic integrated circuits; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553615

Filename

553615