Title :
GaAs p-i-n diodes for room temperature soft X-ray photon counting
Author :
Ng, Jo Shien ; Vines, Peter ; Gomes, Rajiv B. ; Babazadeh, Nasser ; Lees, John E. ; David, John P R ; Tan, Chee Hing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
A study of leakage currents and X-ray photon counting using GaAs p-i-n diodes is presented. Different fabrication techniques have been investigated, namely He implantation, partial wet etching and full wet etching. It was found that the partially etched diodes showed well-defined spectral peaks when exposed to a 55Fe radioisotope source and uniformly low leakage currents ideal for X-ray detector arrays.
Keywords :
III-V semiconductors; X-ray detection; etching; gallium arsenide; leakage currents; p-i-n diodes; photon counting; semiconductor counters; GaAs; X-ray detector array; full wet etching; helium implantation; leakage current; p-i-n diode; partial wet etching; radioisotope source; room temperature soft X-ray photon counting; temperature 293 K to 298 K; Extraterrestrial measurements; Fabrication; Gallium arsenide; MOCVD; Radioactive materials; Substrates;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6154719
