A novel electroluminescent diode with nanocrystalline silicon quantum dots

Author

Yoshida, T. ; Yamada, Y. ; Orii, T.

Author_Institution

Matsushita Res. Inst. Tokyo Inc., Kawasaki, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

417

Lastpage

420

Abstract

We have developed an electroluminescent (EL) diode with novel active layers of nanocrystalline silicon (Si) quantum dots. The nanocrystalline Si active layer is fabricated by pulsed laser ablation (PLA) in inert gas ambient. The structure of the EL diodes is semitransparent Pt electrode/silicon nanocrystallite layer/p-type Si/Pt electrode. We have observed visible spectra of not only photoluminescence (PL) around 2.10 eV but also EL around 1.65 eV, at room temperature. The EL diodes show a rectifying behavior. Furthermore, we have found that the EL diodes show strong nonlinear dependence of EL intensity on current density. A possible mechanism of this emission is impact ionization by hot electrons injected through the surface oxide layers and successive radiative recombination.

Keywords

electroluminescent devices; elemental semiconductors; nanostructured materials; pulsed laser deposition; semiconductor quantum dots; silicon; Si; electroluminescent diode; hot electron injection; impact ionization; nanocrystalline silicon quantum dots; nonlinearity; photoluminescence; pulsed laser ablation; radiative recombination; rectification; surface oxide layer; visible spectra; Diodes; Electrodes; Electroluminescence; Gas lasers; Laser ablation; Optical pulses; Programmable logic arrays; Quantum dot lasers; Quantum dots; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553616

Filename

553616