• DocumentCode
    3358166
  • Title

    Electroless plating of Au, Pt, or Ru thin film layer on CdZnTe

  • Author

    Zheng, Q. ; Dierre, F. ; Corregidor, V. ; Crocco, J. ; Bensalah, H. ; Plaza, J.L. ; Alves, E. ; Dieguez, E.

  • Author_Institution
    Dept. of Mater. Phys., Univ. Autonoma de Madrid, Madrid, Spain
  • fYear
    2011
  • fDate
    23-29 Oct. 2011
  • Firstpage
    4848
  • Lastpage
    4852
  • Abstract
    The electrical and structural properties of thin metallic films (Au, Pt, or Ru) on CdZnTe (CZT) deposited by electroless deposition method have been investigated by means of Atomic Force Microscopy (AFM), Scanning Electron Microscope (SEM), Energy Dispersion X-ray (EDX), and Rutherford Backscattering Spectroscopy (RBS) measurements. SEM and AFM techniques put in evidence the modification of morphology and the change of roughness versus deposition time on the surface of contacts. The surface of Pt or Ru layer on CZT material present micro-cracks at a critical thickness, whereas it does not occur with Au layer. The thickness of Au layer with different deposition time was obtained by RBS depth profiles, which indicates a fast increase of thickness at a short deposition time and a saturation to an asymptotic value of 120 nm after 1 hour deposition.
  • Keywords
    II-VI semiconductors; Rutherford backscattering; X-ray chemical analysis; atomic force microscopy; cadmium compounds; electroless deposition; gold; metallic thin films; microcracks; platinum; ruthenium; scanning electron microscopy; surface morphology; Au; CdZnTe; Pt; Ru; Rutherford backscattering spectroscopy; atomic force microscopy; critical thickness; deposition time; electroless deposition; electroless plating; energy dispersion X-ray; microcracks; morphology modification; scanning electron microscopy; surface roughness; thin metallic films; Atomic layer deposition; Atomic measurements; Gold; Lattices; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
  • Conference_Location
    Valencia
  • ISSN
    1082-3654
  • Print_ISBN
    978-1-4673-0118-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2011.6154727
  • Filename
    6154727