Title :
Pulsed laser ablation of epitaxial and conductive LaNiO3 thin films for ferroelectric device applications
Author :
Yu, Tao ; Chen, Yanfeng ; Sun, Li ; Xiong, Sibei ; Zhou, Hailong ; Chen, Xiaoyuan ; Liu, Zhiguo ; Ming, Naiben ; Shi, Lianjie
Author_Institution :
Lab. of Solid State Microstructures, Nanjing Univ., China
Abstract :
Epitaxial LaNiO3 (LNO) thin films have been fabricated on (001)SrTiO3 (STO) and (001)LaAlO3 (LAO) single crystal substrates at 30 Pa oxygen partial pressure and 700°C substrate temperature by pulsed laser ablation (PLA) using pulsed excimer laser. X-ray θ-2θ scan, X-ray φ scan were used to characterize the as-deposited LNO thin films. The resistance versus temperature of LNO/STO and LNO/LAO were performed by standard DC four point probe method. Down to 80 K the epitaxial LNO thin films showed good metallic behavior. The resistivity of epitaxial LNO thin film was 2.25×10-6 Ω.m at 300 K. Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films have been grown on epitaxial LNO bottom electrodes by PLA method. The capacitance as well as the dielectric loss (tgδ) measurements of PZT thin film in the trilayer Ag/PZT/LNO/STO have been carried out using the HP 1615A Capacitance Bridge at room temperature. P-E hysteresis loop of this sample had been measured using the Sawyer-Tower circuit
Keywords :
X-ray diffraction; capacitance; dielectric hysteresis; dielectric losses; electrical resistivity; epitaxial layers; ferroelectric thin films; lanthanum compounds; pulsed laser deposition; (001)LaAlO3 single crystal substrate; (001)SrTiO3 single crystal substrate; 30 Pa; 700 C; Ag/PZT/LNO/STO trilayer; DC four point probe; HP 1615A Capacitance Bridge; LNO/LAO; LNO/STO; LaNiO3; Sawyer-Tower circuit; X-ray scan; capacitance; dielectric loss; epitaxial conductive LaNiO3 thin film; excimer laser; ferroelectric device; hysteresis loop; pulsed laser ablation; resistivity; Capacitance; Dielectric loss measurement; Dielectric thin films; Laser ablation; Optical pulses; Programmable logic arrays; Substrates; Temperature; Transistors; X-ray lasers;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578229
