Novel shallow junction technology using decaborane (B/sub 10/H/sub 14/)

Author

Goto, K. ; Matsuo, J. ; Sugii, T. ; Minakata, H. ; Yamada, I. ; Hisatsugu, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

435

Lastpage

438

Abstract

We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B/sub 10/H/sub 14/) molecule. Since B/sub 10/H/sub 14/ consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we achieved an ultra-shallow 39-nm-deep junction with 1.5 k/spl Omega//sq. To demonstrate the effect and feasibility for semiconductor devices, we have fabricated a high-performance 0.15-/spl mu/m PMOS device with excellent resistance to short-channel effects.

Keywords

MOSFET; boron; boron compounds; doping profiles; ion implantation; nanotechnology; semiconductor junctions; 0.15 mum; 39 nm; B/sub 10/H/sub 14/; Si:B; decaborane; effective acceleration energy; effective beam current; high-performance PMOS device; low-energy high-dosage B ion implantation technology; semiconductor devices; shallow junction technology; short-channel effects resistance; ultra-shallow junction; Acceleration; Atomic beams; Boron; CMOS technology; Electron beams; Ion implantation; MOS devices; Particle beams; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553620

Filename

553620