Emerging application opportunities for SiGe technology

Author

Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2008

fDate

21-24 Sept. 2008

Firstpage

57

Lastpage

64

Abstract

Bandgap-engineered SiGe HBTs are fully-Si-manufacturing compatible, and can be fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of extremely high frequency operation, exhibit very low broadband and 1/f noise, and high transconductance per unit area, all at very modest lithographic nodes (e.g., 200 GHz / 285 GHz f_T / f_max at 130 nm), making them near-ideal devices for high-speed, mixed-signal circuits. In this work we discuss new technology trends, ultimate performance limits, and emerging application opportunities in SiGe technology.

Keywords

1/f noise; BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; lithography; 1/f noise; BiCMOS; bandgap-engineered SiGe HBT; lithographic nodes; Analog integrated circuits; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2018-6

Electronic_ISBN

978-1-4244-2019-3

Type

conf

DOI

10.1109/CICC.2008.4672020

Filename

4672020