Title :
Emerging application opportunities for SiGe technology
Author :
Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
Bandgap-engineered SiGe HBTs are fully-Si-manufacturing compatible, and can be fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of extremely high frequency operation, exhibit very low broadband and 1/f noise, and high transconductance per unit area, all at very modest lithographic nodes (e.g., 200 GHz / 285 GHz fT / fmax at 130 nm), making them near-ideal devices for high-speed, mixed-signal circuits. In this work we discuss new technology trends, ultimate performance limits, and emerging application opportunities in SiGe technology.
Keywords :
1/f noise; BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; lithography; 1/f noise; BiCMOS; bandgap-engineered SiGe HBT; lithographic nodes; Analog integrated circuits; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672020
